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SI2308BDS-T1-GE3
  • Description: MOSFET N-CH 60V 2.3A SOT23-3
  • Manufacturer: VISHAY
  • Unit Price: 0.71USD
RFQ
Product Attributes

TYPE

DESCRIPTION


Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Package

Tape & Reel (TR


Product Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

2.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

156mOhm @ 1.9A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.8 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

190 pF @ 30 V

FET Feature

-

Power Dissipation (Max)

1.09W (Ta), 1.66W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3 (TO-236)

Package / Case

TO-236-3, SC-59, SOT-23-3

Base Product Number

SI2308



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