Part Status | Not For New Designs |
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FET Type | P-Channel |
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Technology | MOSFET (Metal Oxide) |
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Drain to Source Voltage (Vdss) | 30 V |
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Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
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Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
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Rds On (Max) @ Id, Vgs | 50mOhm @ 4A, 10V |
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Vgs(th) (Max) @ Id | 1.3V @ 250µA |
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Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
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Vgs (Max) | ±12V |
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Input Capacitance (Ciss) (Max) @ Vds | 645 pF @ 15 V |
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FET Feature | - |
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Power Dissipation (Max) | 1.4W (Ta) |
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Operating Temperature | -55°C ~ 150°C (TJ) |
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Mounting Type | Surface Mount |
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Supplier Device Package | SOT-23-3 |
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Package / Case | TO-236-3, SC-59, SOT-23-3 |
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